FQPF9N25CT datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A
* Low Gate Charge (Typ. 26.5 nC)
* Low Crss (Typ. 45.5 pF)
* 100% Avalanche Tested Descr.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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